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rf & protection devices data sheet revision 3.1, 2010-03-16 final BGA771N16 high linearity dual-band umts lna (1900/1800 /2100, 800/900mhz)
edition 2010-03-16 published by infineon technologies ag 81726 munich, germany ? 2010 infineon technologies ag all rights reserved. legal disclaimer the information given in this docu ment shall in no event be regarded as a guarantee of conditions or characteristics. with respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, infine on technologies hereby disclaims any and all warranties and liabilities of any kind, including witho ut limitation, warranties of non-infrin gement of intellectua l property rights of any third party. information for further information on technology, delivery terms and conditions and prices, please contact the nearest infineon technologies office ( www.infineon.com ). warnings due to technical requirements, components may contain dangerous substances. for information on the types in question, please contact the nearest infineon technologies office. infineon technologies compon ents may be used in life-su pport devices or systems only with the express written approval of infineon technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safe ty or effectiveness of that de vice or system. life support devices or systems are intended to be implanted in the hu man body or to support an d/or maintain and sustain and/or protect human life. if they fail, it is reasonable to assume that the health of the user or other persons may be endangered.
data sheet 3 v3.1, 2010-03-16 BGA771N16 - low power dual-band umts lna BGA771N16 revision history: 2010-03-16, v3.1 previous version: 2008-08-26, v3.0 page subjects (major cha nges since last revision) all updated package
data sheet 4 v3.1, 2010-03-16 BGA771N16 - low power dual-band umts lna table of contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 1 description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 2 electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 2.1 absolute maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 2.2 thermal resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 2.3 esd integrity . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 2.4 dc characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 2.5 band select / gain control truth table . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 2.6 supply current characteristics; t a = 25 c . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 2.7 logic signal characteristics; t a = 25 c . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 2.8 switching times . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 2.9 measured rf characteristics low band . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 2.9.1 measured rf characteristics umts band s v / vi . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 0 2.9.2 measured rf characteristics umts band viii . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 2.10 measured rf characteristics mid band . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 2.10.1 measured rf characteristics umts ba nd ii . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 2.10.2 measured rf characteristics umts ba nds iii / ix . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 2.10.3 measured rf characteristics umts ba nd iv . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 2.11 measured performance low band (band v) high gain mode vs. frequency . . . . . . . . . . . . . . . . . . 15 2.12 measured performance low band (band v) high gain mode vs. temperature . . . . . . . . . . . . . . . . 16 2.13 measured performance low band (band v) low gain mo de vs. frequency . . . . . . . . . . . . . . . . . . 17 2.14 measured performance low band (band v) low gain mo de vs. temperature . . . . . . . . . . . . . . . . . 19 2.15 measured performance mid band (band ii) high gain mode vs. frequency . . . . . . . . . . . . . . . . . . . 20 2.16 measured performance mid band (band ii) high gain m ode vs. temperature . . . . . . . . . . . . . . . . . 21 2.17 measured performance mid band (band ii) low gain mode vs. frequency . . . . . . . . . . . . . . . . . . . 22 2.18 measured performance mid band (band ii) low gain m ode vs. temperature . . . . . . . . . . . . . . . . . 24 3 application circuit and block diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25 3.1 umts bands ii and v application circuit schematic . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25 3.2 umts bands iii and viii application circuit schematic . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26 3.3 umts bands iv and viii application circuit schematic . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 7 3.4 pin definition . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 28 3.5 application board . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 29 4 physical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 31 4.1 package footprint . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 31 4.2 package dimensions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 32 table of contents
data sheet 5 v3.1, 2010-03-16 BGA771N16 - low power dual-band umts lna description 1 description the BGA771N16 is a highly flexible, high linearity dual-band (1900/1800/21 00, 800/900 mhz) low noise amplifier mmic for worldwide use. based on infineon?s proprietar y and cost-effective sige:c technology, the BGA771N16 uses an advanced biasing concept in order to achieve high linearity. the device features dynamic gain co ntrol, temperature stabilization, standby mode, and 2 kv esd protection on- chip as well as matching off chip. because the matching is off chip, different umts bands can be easily applied. for example, the 1900 mhz path can be converted into a 1800 mhz or a 2100 mhz path by optimizing the input and output matching network. note: umts bands ii / v is the standard band combinati on for this product requiring no external output matching network. figure 1 block diagram of dual-band lna features ? gain: 16 / -7.5 db in high / low gain mode (all bands) ? noise figure: 1.1 / 1.1 db in high gain mode (800 mhz / 1900 mhz) ? supply current: 3.4 / 0.65 ma in high / low gain mode (all bands) ? standby mode (< 2 a typ.) ? output internally matched to 50 ? ? inputs pre-matched to 50 ? ? 2kv hbm esd protection ? low external component count ? small leadless pg-tsnp-16-1 package (2.3 x 2.3 x 0.39 mm) ? pb-free (rohs compliant) package pg-tsnp-16-1 package type package marking chip BGA771N16 pg-tsnp-16-1 bga771 t1530 %*$1b&klsb%o'yvg %ldvlqj /rjlf &lufxlwu\ 9&& 9*6 5)2870 5)287/ 9(1 9(1 5),1/ 5),10 qf qf 5)*1'0 qf 55() qf qf qf
BGA771N16 - low power dual-band umts lna electrical characteristics absolute maximum ratings data sheet 6 v3.1, 2010-03-16 2 electrical characteristics 2.1 absolute maximum ratings 2.2 thermal resistance 2.3 esd integrity table 1 absolute maximum ratings parameter symbol values unit note / test condition min. max. supply voltage v cc -0.3 3.6 v supply current i cc 10 ma pin voltage v pin -0.3 v cc +0.3 v all pins except rf input pins pin voltage rf input pins v rfin -0.3 0.9 v rf input power p rfin 4dbm junction temperature t j 150 c ambient temperature range t a -30 85 c storage temperature range t stg -65 150 c table 2 thermal resistance parameter symbol value unit note / test conditions thermal resistance junction to soldering point r thjs 37 k/w table 3 esd integrity parameter symbol value (typ.) unit note / test conditions esd hardness hbm 1) 1) according to jesd22-a114 v esd-hbm 2000 v all pins
data sheet 7 v3.1, 2010-03-16 BGA771N16 - low power dual-band umts lna electrical characteristics dc characteristics 2.4 dc characteristics 2.5 band select / gain control truth table table 4 dc characteristics, t a =25c parameter symbol values unit note / test condition min. typ. max. supply voltage v cc 2.7 2.8 3.0 v supply current high gain mode i cchg 3.4 ma all bands supply current low gain mode i cclg 650 a all bands supply current standby mode i ccoff 0.1 2 a logic level high v hi 1.5 2.8 v ven1, ven2 and vgs logic level low v lo 0.0 0.5 v logic currents ven i enl 0.2 a ven1 and ven2 i enh 10.0 a logic currents vgs i gsl 0.1 avgs i gsh 5.0 a table 5 band select truth table, v cc =2.8v mid band low band power down ven1 h l l ven2 l h l table 6 gain control truth table, v cc =2.8v high gain low gain vgs h l
BGA771N16 - low power dual-band umts lna electrical characteristics supply current characteristics; t a =25c data sheet 8 v3.1, 2010-03-16 2.6 supply current characteristics; t a =25c supply current high / mid gain mode versus reference resistor r ref (see figure 2 on page 25 for reference resistor; low gain mode supply current is independent of reference resistor). supply current midband i cc =f ( r ref ) v cc =2.8v supply current lowband i cc =f ( r ref ) v cc =2.8v 1 10 100 2 3 4 5 6 7 8 9 r ref [k ? ] icc [ma] 1 10 100 2 3 4 5 6 7 8 9 r ref [k ? ] icc [ma]
data sheet 9 v3.1, 2010-03-16 BGA771N16 - low power dual-band umts lna electrical characteristics logic signal characteristics; t a =25c 2.7 logic signal characteristics; t a =25c current consumption of logi c inputs ven1, ven2, vgs 2.8 switching times logic currents i en1,2 = f( v en1,2 ) v cc = 2.8 v logic currents i gs = f( v gs ) v cc = 2.8 v table 7 typical switching times; t a = -30 ... 85 c parameter symbol values unit note / test condition min. typ. max. settling time gainstep t gs 1 s switching lg ? hg all bands settling time bandselect t bs 1 s switching from any band to a different band 0 0.5 1 1.5 2 2.5 3 0 2 4 6 8 10 12 v en1,2 [v] i en1,2 [a] 0 0.5 1 1.5 2 2.5 3 0 2 4 6 v gs [v] i gs [a]
BGA771N16 - low power dual-band umts lna electrical characteristics measured rf characteristics low band data sheet 10 v3.1, 2010-03-16 2.9 measured rf characteristics low band 2.9.1 measured rf characteristics umts bands v / vi table 8 typical characteristics 800 mhz band, t a =25c, v cc =2.8v parameter symbol values unit note / test condition min. typ. max. pass band range band v 869 894 mhz pass band range band vi 875 885 mhz current consumption i cchg 3.4 ma high gain mode i cclg 0.65 ma low gain mode gain s 21hg 16.1 db high gain mode s 21lg -7.5 db low gain mode reverse isolation 1) 1) verified by random sampling; not 100% rf tested s 12hg -36 db high gain mode s 12lg -8 db low gain mode noise figure nf hg 1.1 db high gain mode nf lg 7.5 db low gain mode input return loss 1) s 11hg -17 db 50 ?, high gain mode s 11lg -17 db 50 ?, low gain mode output return loss 1) s 22hg -17 db 50 ? , high gain mode s 22lg -13 db 50 ? , low gain mode stability factor 2) 2) not tested in production; guaranteed by device design k >2.3 dc to 10 ghz; all gain modes input compression point 1) ip 1dbhg -6 dbm high gain mode ip 1dblg -8 dbm low gain mode inband iip3 1) f 1 - f 2 = 1 mhz p f1 = p f2 = -37 dbm iip3 hg iip3 lg -7 2 dbm high gain mode low gain mode
data sheet 11 v3.1, 2010-03-16 BGA771N16 - low power dual-band umts lna electrical characteristics measured rf characteristics low band 2.9.2 measured rf characteristics umts band viii table 9 typical characteristics 900 mhz band, t a = 25 c, v cc = 2.8 v parameter symbol values unit note / test condition min. typ. max. pass band range 925 960 mhz current consumption i cchg 3.4 ma high gain mode i cclg 0.65 ma low gain mode gain s 21hg 16.1 db high gain mode s 21lg -7.1 db low gain mode reverse isolation 1) 1) verified by random sampling; not 100% rf tested s 12hg -36 db high gain mode s 12lg -7 db low gain mode noise figure nf hg 1.1 db high gain mode nf lg 7.1 db low gain mode input return loss 1) s 11hg -16 db 50 ?, high gain mode s 11lg -15 db 50 ?, low gain mode output return loss 1) s 22hg -15 db 50 ? , high gain mode s 22lg -16 db 50 ? , low gain mode stability factor 2) 2) not tested in production; guaranteed by device design k >2.3 dc to 10 ghz; all gain modes input compression point 1) ip 1dbhg -5 dbm high gain mode ip 1dblg -8 dbm low gain mode inband iip3 1) f 1 - f 2 = 1 mhz p f1 = p f2 = -37 dbm iip3 hg iip3 lg -6 2 dbm high gain mode low gain mode
BGA771N16 - low power dual-band umts lna electrical characteristics measured rf characteristics mid band data sheet 12 v3.1, 2010-03-16 2.10 measured rf characteristics mid band 2.10.1 measured rf characteristics umts band ii table 10 typical characteristics 1900 mhz band, t a = 25 c, v cc = 2.8 v parameter symbol values unit note / test condition min. typ. max. pass band range 1930 1990 mhz current consumption i cchg 3.4 ma high gain mode i cclg 0.65 ma low gain mode gain s 21hg 16.0 db high gain mode s 21lg -7.8 db low gain mode reverse isolation 1) 1) verified by random sampling; not 100% rf tested s 12hg -35 db high gain mode s 12lg -8 db low gain mode noise figure nf hg 1.1 db high gain mode nf lg 7.8 db low gain mode input return loss 1) s 11hg -19 db 50 ?, high gain mode s 11lg -18 db 50 ?, low gain mode output return loss 1) s 22hg -20 db 50 ? , high gain mode s 22lg -15 db 50 ? , low gain mode stability factor 2) 2) not tested in production; guaranteed by device design k >2.4 dc to 10 ghz; all gain modes input compression point 1) ip 1dbhg -7 dbm high gain mode ip 1dblg -7 dbm low gain mode inband iip3 1) f 1 - f 2 = 1 mhz p f1 = p f2 = -37 dbm iip3 hg iip3 lg -6 3 dbm high gain mode low gain mode
data sheet 13 v3.1, 2010-03-16 BGA771N16 - low power dual-band umts lna electrical characteristics measured rf characteristics mid band 2.10.2 measured rf characteris tics umts bands iii / ix table 11 typical characteristics 1800 mhz band, t a = 25 c, v cc = 2.8 v parameter symbol values unit note / test condition min. typ. max. pass band range band iii 1805 1880 mhz pass band range band ix 1844.9 1879.9 mhz current consumption i cchg 3.4 ma high gain mode i cclg 0.65 ma low gain mode gain s 21hg 16.2 db high gain mode s 21lg -8.7 db low gain mode reverse isolation 1) 1) verified by random sampling; not 100% rf tested s 12hg -36 db high gain mode s 12lg -9 db low gain mode noise figure nf hg 1.0 db high gain mode nf lg 8.7 db low gain mode input return loss 1) s 11hg -13 db 50 ?, high gain mode s 11lg -14 db 50 ?, low gain mode output return loss 1) s 22hg -19 db 50 ? , high gain mode s 22lg -15 db 50 ? , low gain mode stability factor 2) 2) not tested in production; guaranteed by device design k >2.5 dc to 10 ghz; all gain modes input compression point 1) ip 1dbhg -7 dbm high gain mode ip 1dblg -6 dbm low gain mode inband iip3 1) f 1 - f 2 = 1 mhz p f1 = p f2 = -37 dbm iip3 hg iip3 lg -5 3 dbm high gain mode low gain mode
BGA771N16 - low power dual-band umts lna electrical characteristics measured rf characteristics mid band data sheet 14 v3.1, 2010-03-16 2.10.3 measured rf characteristics umts band iv table 12 typical characteristics 2100 mhz band, t a = 25 c, v cc = 2.8 v parameter symbol values unit note / test condition min. typ. max. pass band range 2110 2155 mhz current consumption i cchg 3.4 ma high gain mode i cclg 0.65 ma low gain mode gain s 21hg 15.8 db high gain mode s 21lg -7.0 db low gain mode reverse isolation 1) 1) verified by random sampling; not 100% rf tested s 12hg -34 db high gain mode s 12lg -7 db low gain mode noise figure nf hg 1.1 db high gain mode nf lg 7 db low gain mode input return loss 1) s 11hg -19 db 50 ?, high gain mode s 11lg -14 db 50 ?, low gain mode output return loss 1) s 22hg -19 db 50 ? , high gain mode s 22lg -15 db 50 ? , low gain mode stability factor 2) 2) not tested in production; guaranteed by device design k >2.3 dc to 10 ghz; all gain modes input compression point 1) ip 1dbhg -7 dbm high gain mode ip 1dblg -4 dbm low gain mode inband iip3 1) f 1 - f 2 = 1 mhz p f1 = p f2 = -37 dbm iip3 hg iip3 lg -4 6 dbm high gain mode low gain mode
data sheet 15 v3.1, 2010-03-16 BGA771N16 - low power dual-band umts lna electrical characteristics measured performance low band (band v) high gain mode vs. frequency 2.11 measured performance low band (band v) high gain mode vs. frequency t a =25c, v cc = 2.8 v, v gs = 2.8 v, v en1 = 0 v, v en2 = 2.8 v power gain |s 21 | = f ( f ) power gain wideband |s 21 | = f ( f ) matching | s 11 | = f ( f ), | s 22 | = f ( f ) gainstep hg-lg | ? s 21 | = f ( f ) 0.86 0.87 0.88 0.89 0.9 13 14 15 16 17 18 19 frequency [ghz] power gain [db] ?30c 25c 85c 0 2 4 6 8 10 ?40 ?30 ?20 ?10 0 10 20 frequency [ghz] power gain [db] 0.86 0.87 0.88 0.89 0.9 ?30 ?25 ?20 ?15 ?10 ?5 0 frequency [ghz] |s 11 |, |s 22 | [db] s 11 s 22 0.86 0.87 0.88 0.89 0.9 22 22.5 23 23.5 24 24.5 25 25.5 26 frequency [ghz] delta gain [db] 25c, 85c ?30c 25c, 85c ?30c 25c, 85c ?30c
BGA771N16 - low power dual-band umts lna electrical characteristics measured performance low band (band v) high gain mode vs. temperature data sheet 16 v3.1, 2010-03-16 2.12 measured performance low band (band v) high gain mode vs. temperature v cc = 2.8 v, v gs = 2.8 v, v en1 = 0 v, v en2 = 2.8 v, f =880mhz noise figure nf = f ( f ) input compression p1db = f ( f ) power gain |s 21 | = f ( t a ) supply current i cc = f ( t a ) 0.86 0.87 0.88 0.89 0.9 0.8 0.9 1 1.1 1.2 1.3 1.4 1.5 1.6 frequency [ghz] nf [db] 0.86 0.87 0.88 0.89 0.9 ?14 ?12 ?10 ?8 ?6 ?4 ?2 0 frequency [ghz] p1db [dbm] ?40 ?20 0 20 40 60 80 100 13 14 15 16 17 18 19 t a [c] power gain [db] ?40 ?20 0 20 40 60 80 100 2 2.5 3 3.5 4 4.5 5 5.5 t a [c] i cc [ma]
data sheet 17 v3.1, 2010-03-16 BGA771N16 - low power dual-band umts lna electrical characteristics measured performance low band (band v) low gain mode vs. frequency 2.13 measured performance low band (ba nd v) low gain mode vs. frequency t a = 25 c, v cc = 2.8 v, v gs = 0 v, v en1 = 0 v, v en2 = 2.8 v noise figure nf = f ( t a ) input compression p1db = f ( t a ) power gain |s 21 | = f ( f ) power gain wideband |s 21 | = f ( f ) ?40 ?20 0 20 40 60 80 100 0.6 0.8 1 1.2 1.4 1.6 1.8 t a [c] nf [db] ?40 ?20 0 20 40 60 80 100 ?14 ?12 ?10 ?8 ?6 ?4 ?2 0 t a [c] p1db [dbm] 0.86 0.87 0.88 0.89 0.9 ?11 ?10 ?9 ?8 ?7 ?6 ?5 frequency [ghz] power gain [db] ?30c 25c 85c 0 2 4 6 8 10 ?60 ?50 ?40 ?30 ?20 ?10 0 frequency [ghz] power gain [db]
BGA771N16 - low power dual-band umts lna electrical characteristics measured performance low band (band v) low gain mode vs. frequency data sheet 18 v3.1, 2010-03-16 matching | s 11 | = f ( f ), | s 22 | = f ( f ) noise figure nf = f ( f ) input compression p1db = f ( f ) 0.86 0.87 0.88 0.89 0.9 ?30 ?25 ?20 ?15 ?10 ?5 0 frequency [ghz] |s 11 |, |s 22 | [db] s 11 s 22 0.86 0.87 0.88 0.89 0.9 5 6 7 8 9 10 11 frequency [ghz] nf [db] 0.86 0.87 0.88 0.89 0.9 ?14 ?12 ?10 ?8 ?6 ?4 ?2 0 frequency [ghz] p1db [dbm]
data sheet 19 v3.1, 2010-03-16 BGA771N16 - low power dual-band umts lna electrical characteristics measured performance low band (band v) low gain mode vs. temperature 2.14 measured performance low band (band v) low gain mode vs. temperature v cc = 2.8 v, v gs = 0 v, v en1 = 0 v, v en2 = 2.8 v, f =880mhz power gain |s 21 | = f ( t a ) supply current i cc = f ( t a ) noise figure nf = f ( t a ) input compression p1db = f ( t a ) ?40 ?20 0 20 40 60 80 100 ?11 ?10 ?9 ?8 ?7 ?6 ?5 t a [c] power gain [db] ?40 ?20 0 20 40 60 80 100 0.5 0.55 0.6 0.65 0.7 0.75 0.8 t a [c] i cc [ma] ?40 ?20 0 20 40 60 80 100 5 6 7 8 9 10 11 t a [c] nf [db] ?40 ?20 0 20 40 60 80 100 ?14 ?12 ?10 ?8 ?6 ?4 ?2 0 t a [c] p1db [dbm]
BGA771N16 - low power dual-band umts lna electrical characteristics measured performance mid band (band ii) high gain mode vs. frequency data sheet 20 v3.1, 2010-03-16 2.15 measured performance mid band (ban d ii) high gain mode vs. frequency t a = 25 c, v cc = 2.8 v, v gs = 2.8 v, v en1 = 2.8 v, v en2 = 0 v power gain |s 21 | = f ( f ) power gain wideband |s 21 | = f ( f ) matching | s 11 | = f ( f ), | s 22 | = f ( f ) gainstep hg-lg | ? s 21 | = f ( f ) 1.93 1.94 1.95 1.96 1.97 1.98 1.99 13 14 15 16 17 18 19 frequency [ghz] power gain [db] ?30c 25c 85c 0 2 4 6 8 10 ?40 ?30 ?20 ?10 0 10 20 frequency [ghz] power gain [db] 1.93 1.94 1.95 1.96 1.97 1.98 1.99 ?30 ?25 ?20 ?15 ?10 ?5 0 frequency [ghz] |s 11 |, |s 22 | [db] s 11 s 22 1.93 1.94 1.95 1.96 1.97 1.98 1.99 22 22.5 23 23.5 24 24.5 25 25.5 26 frequency [ghz] delta gain [db] 25c ?30c 85c 25c ?30c 85c 25c ?30c 85c
data sheet 21 v3.1, 2010-03-16 BGA771N16 - low power dual-band umts lna electrical characteristics measured performance mid band (band ii) high gain mode vs. temperature 2.16 measured performance mid band (band ii) high gain mode vs. temperature v cc = 2.8 v, v gs = 2.8 v, v en1 = 2.8 v, v en2 = 0 v, f = 1960 mhz noise figure nf = f ( f ) input compression p1db = f ( f ) power gain |s 21 | = f ( t a ) supply current i cc = f ( t a ) 1.93 1.94 1.95 1.96 1.97 1.98 1.99 0.8 0.9 1 1.1 1.2 1.3 1.4 1.5 1.6 frequency [ghz] nf [db] 1.93 1.94 1.95 1.96 1.97 1.98 1.99 ?14 ?12 ?10 ?8 ?6 ?4 ?2 0 frequency [ghz] p1db [dbm] ?40 ?20 0 20 40 60 80 100 13 14 15 16 17 18 19 t a [c] power gain [db] ?40 ?20 0 20 40 60 80 100 2 2.5 3 3.5 4 4.5 5 5.5 t a [c] i cc [ma]
BGA771N16 - low power dual-band umts lna electrical characteristics measured performance mid band (band ii) low gain mode vs. frequency data sheet 22 v3.1, 2010-03-16 2.17 measured performance mid band (ban d ii) low gain mode vs. frequency t a = 25 c, v cc = 2.8 v, v gs = 0 v, v en1 = 2.8 v, v en2 = 0 v noise figure nf = f ( t a ) input compression p1db = f ( t a ) power gain |s 21 | = f ( f ) power gain wideband |s 21 | = f ( f ) ?40 ?20 0 20 40 60 80 100 0.6 0.8 1 1.2 1.4 1.6 1.8 t a [c] nf [db] ?40 ?20 0 20 40 60 80 100 ?14 ?12 ?10 ?8 ?6 ?4 ?2 0 t a [c] p1db [dbm] 1.93 1.94 1.95 1.96 1.97 1.98 1.99 ?11 ?10 ?9 ?8 ?7 ?6 ?5 frequency [ghz] power gain [db] ?30c 25c 85c 0 2 4 6 8 10 ?60 ?50 ?40 ?30 ?20 ?10 0 frequency [ghz] power gain [db]
data sheet 23 v3.1, 2010-03-16 BGA771N16 - low power dual-band umts lna electrical characteristics measured performance mid band (band ii) low gain mode vs. frequency matching | s 11 | = f ( f ), | s 22 | = f ( f ) noise figure nf = f ( f ) input compression p1db = f ( f ) 1.93 1.94 1.95 1.96 1.97 1.98 1.99 ?30 ?25 ?20 ?15 ?10 ?5 0 frequency [ghz] |s 11 |, |s 22 | [db] s 11 s 22 1.93 1.94 1.95 1.96 1.97 1.98 1.99 5 6 7 8 9 10 11 frequency [ghz] nf [db] 1.93 1.94 1.95 1.96 1.97 1.98 1.99 ?14 ?12 ?10 ?8 ?6 ?4 ?2 0 frequency [ghz] p1db [dbm]
BGA771N16 - low power dual-band umts lna electrical characteristics measured performance mid band (band ii) low gain mode vs. temperature data sheet 24 v3.1, 2010-03-16 2.18 measured performance mid band (band ii) low gain mode vs. temperature v cc = 2.8 v, v gs = 0 v, v en1 = 2.8 v, v en2 = 0 v, f = 1960 mhz power gain |s 21 | = f ( t a ) supply current i cc = f ( t a ) noise figure nf = f ( t a ) input compression p1db = f ( t a ) ?40 ?20 0 20 40 60 80 100 ?11 ?10 ?9 ?8 ?7 ?6 ?5 t a [c] power gain [db] ?40 ?20 0 20 40 60 80 100 0.5 0.55 0.6 0.65 0.7 0.75 0.8 t a [c] i cc [ma] ?40 ?20 0 20 40 60 80 100 5 6 7 8 9 10 11 t a [c] nf [db] ?40 ?20 0 20 40 60 80 100 ?14 ?12 ?10 ?8 ?6 ?4 ?2 0 t a [c] p1db [dbm]
data sheet 25 v3.1, 2010-03-16 BGA771N16 - low power dual-band umts lna application circuit and block diagram umts bands ii and v application circuit schematic 3 application circuit and block diagram 3.1 umts bands ii and v app lication circuit schematic figure 2 application circuit wi th chip outline (top view) note: package paddle (pin 0) has to be rf grounded. table 13 parts list part number part type manufacturer size comment l1 ... l2 chip inductor various 0402 wirewound, q 50 c1 ... c5 chip capacitor various 0402 rref chip resistor various 0402 bga 771 n16 _appl _bands25 _bld.vsd c1 10 pf l1 v cc = 2.8v v gs = 0 / 2 .8v rfin band ii v en = 0 / 2.8v 0 gnd 8 7 6 9 10 11 12 13 14 15 16 1 2 3 4 5 biasing & logic circuitry vcc vgs rfoutm rfoutl ven1 ven2 rfinl rfinm n/c n/c rfgndm rref l1 3.3nh c5 10nf r ref 27k ? n/c c2 22pf l1 c3 3.0pf l1 rfin band v l2 9.1 nh c4 22pf v en = 0 / 2 .8v rfout band ii rfout band v n/c n /c n/c
BGA771N16 - low power dual-band umts lna application circuit and block diagram umts bands iii and viii app lication circuit schematic data sheet 26 v3.1, 2010-03-16 3.2 umts bands iii and viii ap plication circuit schematic figure 3 application circuit wi th chip outline (top view) note: package paddle (pin 0) has to be rf grounded. table 14 parts list part number part type manufacturer size comment l1 ... l4 chip inductor various 0402 wirewound, q 50 c1 ... c6 chip capacitor various 0402 rref chip resistor various 0402 bga 771n16_ appl_bands 38_ bld.vsd c1 22pf l1 v cc = 2 .8v v gs = 0 / 2.8v rfin band iii v en = 0 / 2 .8v 0 gnd 8 7 6 9 10 11 12 13 14 15 16 1 2 3 4 5 biasing & logic circuitry vcc vgs rfoutm rfoutl ven1 ven 2 rfinl rfinm n/c n/c rfgndm rref l1 4 .3nh rfout band viii l4 3 .3nh rfout band iii l3 1 .5nh c5 10nf r ref 27k ? n/c c2 22pf l1 c3 3.3 pf l1 rfin band viii l2 8.2nh c4 22pf c6 1.5pf v en = 0 / 2.8v n/c n/c n/c
data sheet 27 v3.1, 2010-03-16 BGA771N16 - low power dual-band umts lna application circuit and block diagram umts bands iv and viii app lication circuit schematic 3.3 umts bands iv and viii a pplication circuit schematic figure 4 application circuit wi th chip outline (top view) note: package paddle (pin 0) has to be rf grounded. table 15 parts list part number part type manufacturer size comment l1 ... l4 chip inductor various 0402 wirewound, q 50 c1 ... c5 chip capacitor various 0402 rref chip resistor various 0402 bga 771n16_ appl_ bands48_ bld.vsd c1 22pf l1 v cc = 2 .8v v gs = 0 / 2.8v rfin band iv v en = 0 / 2 .8v 0 gnd 8 7 6 9 10 11 12 13 14 15 16 1 2 3 4 5 biasing & logic circuitry vcc vgs rfoutm rfoutl ven1 ven 2 rfinl rfinm n/c n/c rfgndm rref l1 3.4 nh rfout band viii l4 3 .3nh rfout band iv l3 2 .2nh c5 10nf r ref 27 k ? n/c c2 22pf l1 c3 3.3 pf l1 rfin band viii l2 8 .2nh c4 22pf v en = 0 / 2.8v n/c n/c n/c
BGA771N16 - low power dual-band umts lna application circuit and block diagram pin definition data sheet 28 v3.1, 2010-03-16 3.4 pin definition table 16 pin definition and function pin number symbol function 0 gnd package paddle; ground connection for low band lna and control circuity 1 n/c not connected 2 vgs gain step control 3 vcc supply voltage 4 n/c not connected 5 n/c not connected 6 rfinm mid band (1900/1800/2100 mhz) lna input 7 n/c not connected 8 rfgndm mid band lna emitter ground 9 n/c not connected 10 rfinl low band (800/900 mhz) lna input 11 ven2 band select control 12 ven1 band select control 13 rref bias current reference resistor (high gain mode) 14 rfoutl low band (800/900 mhz) lna output 15 n/c not connected 16 rfoutm mid band (1900/180 0/2100 mhz) lna output
data sheet 29 v3.1, 2010-03-16 BGA771N16 - low power dual-band umts lna application circuit and block diagram application board 3.5 application board figure 5 application board layout on 3-layer fr4. top layer thickness: 0.2 mm, bottom layer thickness: 0.8 mm, 17 m cu metallization, gold plated. board size: 21 x 50 mm figure 6 cross-section view of application board %*$1b$ssb%rdugyvg 7rs/d\huwrsylhz %rwwrp/d\huwrsylhz 0lggoh/d\huwrsylhz %*$1b&urvvb6hfwlrqb9lhzyvg pp&rsshu pp3uhsuhj)5 pp3uhsuhj)5 pp&rsshu pp)5 pp3uhsuhj)5 pp3uhsuhj)5 pp&rsshu
BGA771N16 - low power dual-band umts lna application circuit and block diagram application board data sheet 30 v3.1, 2010-03-16 figure 7 detail of application board layout note: in order to achieve the same performance as given in this datasheet please follow the suggested pcb-layout as closely as possible. the position of th e gnd vias is critical for rf performance. %*$1b$ssb%rdugbh[dfwyvg qf *1' 5),10 5)*1'0 qf 5)2870 5)287/ (1 5),1/ *6 9&& qf 55() (1 qf qf qf
data sheet 31 v3.1, 2010-03-16 BGA771N16 - low power dual-band umts lna physical characteristics package footprint 4 physical characteristics 4.1 package footprint figure 8 recommended footprint and stenci l layout for the tsnp-16-1 package
BGA771N16 - low power dual-band umts lna physical characteristics package dimensions data sheet 32 v3.1, 2010-03-16 4.2 package dimensions figure 9 package outline (top, side and bottom view)
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